E2000 datasheet(81/104 Pages) INTEL

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Datasheet

Thermal Specifications and Design Considerations

5.3

Thermal Diode

The processor incorporates an on-die PNP transistor where the base emitter junction is

used as a thermal "diode", with its collector shorted to ground. A thermal sensor

located on the system board may monitor the die temperature of the processor for

thermal management and fan speed control. Table 29,Table 30, and Table 31 provide

the "diode" parameter and interface specifications. Two different sets of "diode"

parameters are listed in Table 29 and Table 30. The Diode Model parameters (Table 29)

apply to traditional thermal sensors that use the Diode Equation to determine the

processor temperature. Transistor Model parameters (Table 30) have been added to

support thermal sensors that use the transistor equation method. The Transistor Model

may provide more accurate temperature measurements when the diode ideality factor

is closer to the maximum or minimum limits. This thermal "diode" is separate from the

Thermal Monitor's thermal sensor and cannot be used to predict the behavior of the

Thermal Monitor.

TCONTROL is a temperature specification based on a temperature reading from the

thermal diode. The value for TCONTROL will be calibrated in manufacturing and

configured for each processor. The TCONTROL temperature for a given processor can be

obtained by reading a MSR in the processor. The TCONTROL value that is read from the

MSR needs to be converted from Hexadecimal to Decimal and added to a base value of

50 °C.

The value of TCONTROL may vary from 00 h to 1E h (0 to 30 °C).

When TDIODE is above TCONTROL, then TC must be at or below TC_MAX as defined by the

thermal profile in Table 27; otherwise, the processor temperature can be maintained at

TCONTROL (or lower) as measured by the thermal diode.

NOTES:

Intel does not support or recommend operation of the thermal diode under reverse bias.

Preliminary data. Will be characterized across a temperature range of 50 – 80 °C.

Not 100% tested. Specified by design characterization.

The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by

the diode equation:

IFW = IS * (e

qVD/nkT –1)

where IS = saturation current, q = electronic charge, VD = voltage across the diode, k =

Boltzmann Constant, and T = absolute temperature (Kelvin).

The series resistance, RT, is provided to allow for a more accurate measurement of the

junction temperature. RT, as defined, includes the lands of the processor but does not

include any socket resistance or board trace resistance between the socket and the

external remote diode thermal sensor. RT can be used by remote diode thermal sensors

with automatic series resistance cancellation to calibrate out this error term. Another

application is that a temperature offset can be manually calculated and programmed into

an offset register in the remote diode thermal sensors as exemplified by the equation:

Terror = [RT * (N–1) * IFWmin] / [nk/q * ln N]

where Terror = sensor temperature error, N = sensor current ratio, k = Boltzmann

Constant, q = electronic charge.

Table 29.

Thermal “Diode” Parameters using Diode Model

Symbol

Parameter

Min

Typ

Max

Unit

Notes

IFW

Forward Bias Current

—

200

µA

Diode Ideality Factor

1.000

1.009

1.050

2, 3, 4

Series Resistance

2.79

4.52

6.24

2, 3, 5

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