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M48Z2M1V Scheda tecnica(PDF) 10 Page - STMicroelectronics

Il numero della parte M48Z2M1V
Spiegazioni elettronici  5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM
PDF  20 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z2M1V Scheda tecnica(HTML) 10 Page - STMicroelectronics

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Operation modes
M48Z2M1Y, M48Z2M1V
10/20
Doc ID 5135 Rev 5
Table 4.
WRITE mode AC characteristics
2.3
Data retention mode
With valid VCC applied, the M48Z2M1Y/V operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself tWP after VCC falls below VPFD. All outputs become high impedance, and all
inputs are treated as “Don't care.”
If power fail detection occurs during a valid access, the memory cycle continues to
completion. If the memory cycle fails to terminate within the time tWP, write protection takes
place. When VCC drops below VSO, the control circuit switches power to the internal energy
source which preserves data.
The internal coin cells will maintain data in the M48Z2M1Y/V after the initial application of
VCC for an accumulated period of at least 10 years when VCC is less than VSO. As system
power returns and VCC rises above VSO, the batteries are disconnected, and the power
supply is switched to external VCC. Write protection continues for tER after VCC reaches
VPFD to allow for processor stabilization. After tER, normal RAM operation can resume.
For more information on battery storage life refer to the application note AN1012.
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6V (except where
noted).
M48Z2M1Y
M48Z2M1V
Unit
–70
–85
Min
Max
Min
Max
tAVAV
WRITE cycle time
70
85
ns
tAVEH
Address valid to chip enable high
65
75
ns
tAVEL
Address valid to chip enable low
0
0
ns
tAVWH
Address valid to WRITE enable high
65
75
ns
tAVWL
Address valid to WRITE enable low
0
0
ns
tDVEH
Input valid to chip enable high
30
35
ns
tDVWH
Input valid to WRITE enable high
30
35
ns
tEHAX
Chip enable high to address transition
15
15
ns
tEHDX
Chip enable high to input transition
10
15
ns
tELEH
Chip enable low to chip enable high
55
75
ns
tWHAX
WRITE enable high to address transition
5
5
ns
tWHDX
WRITE enable high to input transition
0
0
ns
tWHQX
(2)(3)
2.
CL = 5 pF (see Figure 9 on page 13).
3.
If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
WRITE enable high to output transition
5
5
ns
tWLQZ
(2)(3)
WRITE enable low to output Hi-Z
25
30
ns
tWLWH
WRITE enable pulse width
55
65
ns



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