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M48Z2M1V Scheda tecnica(PDF) 10 Page - STMicroelectronics |
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M48Z2M1V Scheda tecnica(HTML) 10 Page - STMicroelectronics |
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10 / 20 page ![]() Operation modes M48Z2M1Y, M48Z2M1V 10/20 Doc ID 5135 Rev 5 Table 4. WRITE mode AC characteristics 2.3 Data retention mode With valid VCC applied, the M48Z2M1Y/V operates as a conventional BYTEWIDE™ static RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write protecting itself tWP after VCC falls below VPFD. All outputs become high impedance, and all inputs are treated as “Don't care.” If power fail detection occurs during a valid access, the memory cycle continues to completion. If the memory cycle fails to terminate within the time tWP, write protection takes place. When VCC drops below VSO, the control circuit switches power to the internal energy source which preserves data. The internal coin cells will maintain data in the M48Z2M1Y/V after the initial application of VCC for an accumulated period of at least 10 years when VCC is less than VSO. As system power returns and VCC rises above VSO, the batteries are disconnected, and the power supply is switched to external VCC. Write protection continues for tER after VCC reaches VPFD to allow for processor stabilization. After tER, normal RAM operation can resume. For more information on battery storage life refer to the application note AN1012. Symbol Parameter(1) 1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6V (except where noted). M48Z2M1Y M48Z2M1V Unit –70 –85 Min Max Min Max tAVAV WRITE cycle time 70 85 ns tAVEH Address valid to chip enable high 65 75 ns tAVEL Address valid to chip enable low 0 0 ns tAVWH Address valid to WRITE enable high 65 75 ns tAVWL Address valid to WRITE enable low 0 0 ns tDVEH Input valid to chip enable high 30 35 ns tDVWH Input valid to WRITE enable high 30 35 ns tEHAX Chip enable high to address transition 15 15 ns tEHDX Chip enable high to input transition 10 15 ns tELEH Chip enable low to chip enable high 55 75 ns tWHAX WRITE enable high to address transition 5 5 ns tWHDX WRITE enable high to input transition 0 0 ns tWHQX (2)(3) 2. CL = 5 pF (see Figure 9 on page 13). 3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state. WRITE enable high to output transition 5 5 ns tWLQZ (2)(3) WRITE enable low to output Hi-Z 25 30 ns tWLWH WRITE enable pulse width 55 65 ns |
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