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STPS20L45C Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STPS20L45C
Spiegazioni elettronici  Low drop power Schottky rectifier
PDF  9 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS20L45C Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STPS20L45C
Characteristics
3/9
Figure 1.
Average forward power
dissipation versus average forward
current (per diode)
Figure 2.
Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
P
(W)
F(AV)
02468
10
12
14
0
1
2
3
4
5
6
7
8
T
δ=tp/T
tp
I
(A)
F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
11
12
I
(A)
F(AV)
TO-220FPAB
R=R
th(j-a)
th(j-c)
T
(°C)
amb
T
δ=tp/T
tp
TO-220AB / TO-247
R
=15°C/W
th(j-a)
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220AB, D2PAK)
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode,
TO-220FPAB)
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
I (A)
M
IM
t
δ=0.5
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
I (A)
M
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
IM
t
δ=0.5
t(s)
T =50°C
C
T =100°C
C
T =25°C
j



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