STPS20L45C datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS20L45C

4/9

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB, D2PAK)

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration ( TO-220FPAB)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-c)

1E-3

1E-2

1E-1

1E+ 0

1E+ 1

0.0

0.2

0.4

0.6

0.8

1.0

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 9.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

2E+2

I (mA)

V (V)

T =125°C

T =150°C

T =75°C

T =25°C

100

1000

2000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Figure 11.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

under tab (Epoxy printed circuit

board FR4, copper thickness:

35µm)( D2PAK)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

1.0

10.0

100.0

(A)

(V)

T =125°C

T =75°C

T =150°C

(typical values)

T =25°C

(°C/W)

th(j-a)

S(Cu)(cm²)

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