STW34NM60N datasheet(1/17 Pages) STMICROELECTRONICS

Il numero della parte	STW34NM60N

Spiegazioni elettronici	N-channel 600 V, 0.092 Ω, 29 A MDmesh??II Power MOSFET TO-220, TO-247, TO-220FP

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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March 2011

Doc ID 17740 Rev 3

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17

STF34NM60N

STP34NM60N, STW34NM60N

N-channel 600 V, 0.092

Ω, 29 A MDmesh™ II Power MOSFET

TO-220, TO-247, TO-220FP

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

Switching applications

Description

These devices are made using the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max.

ID

PTOT

STF34NM60N

STP34NM60N

STW34NM60N

600 V

0.105

Ω

0.105

Ω

0.105

Ω

29 A

40 W

210 W

1

2

3

1

2

3

TO-247

TO-220

1

2

3

TO-220FP

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF34NM60N

STP34NM60N

STW34NM60N

34NM60N

TO-220FP

TO-220

TO-247

Tube

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