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STW34NM60N Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STW34NM60N
Spiegazioni elettronici  N-channel 600 V, 0.092 Ω, 29 A MDmesh??II Power MOSFET TO-220, TO-247, TO-220FP
PDF  17 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW34NM60N Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STF34NM60N, STP34NM60N, STW34NM60N
Electrical ratings
Doc ID 17740 Rev 3
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
29
29 (1)
1.
Limited only by maximu temperature allowed.
A
ID
Drain current (continuous) at TC = 100 °C
18
18
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
116
116
A
PTOT
Total dissipation at TC = 25 °C
210
40
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
10.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
345
mJ
dv/dt(3)
3.
ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
1200
V
Tstg
Storage temperature
- 55 to 150
°C
TJ
Max. operating junction temperature
150
Table 3.
Thermal data
Symbol
Parameter
TO-220
TO-247
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
0.60
3.13
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C



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