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2N6121 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte 2N6121
Spiegazioni elettronici  Silicon NPN Power Transistors
PDF  3 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6121 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6121 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6121 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6121 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6121 2N6122 2N6123
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6121
45
2N6122
60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6123
IC=0.1A ;IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=1.5A;IB=0.15A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=4.0A;IB=1.0A
1.4
V
VBE
Base-emitter on voltage
IC=1.5A ; VCE=2V
1.2
V
2N6121
VCE=45V;VBE=1.5V
TC=125℃
0.1
2.0
2N6122
VCE=60V;VBE=1.5V
TC=125℃
0.1
2.0
ICEX
Collector cut-off current
2N6123
VCE=80V;VBE=1.5V
TC=125℃
0.1
2.0
mA
2N6121
VCE=45V;IB=0
2N6122
VCE=60V;IB=0
ICEO
Collector cut-off current
2N6123
VCE=80V;IB=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
2N6121
2N6122
25
100
hFE-1
DC current gain
2N6123
IC=1.5A ; VCE=2V
20
80
2N6121
2N6122
10
hFE-2
DC current gain
2N6123
IC=4A ; VCE=2V
7
fT
Transition frequency
IC=1A ; VCE=4V
2.5
MHz



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