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2N6121 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6121 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION ・With TO-220 package ・Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS ・For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6121 45 2N6122 60 VCBO Collector-base voltage 2N6123 Open emitter 80 V 2N6121 45 2N6122 60 VCEO Collector-emitter voltage 2N6123 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A IB Base current 1 A PT Total power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 3.125 ℃/W |
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