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BD329 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD329 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD329 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.5 V VBE(on)-1 Base-Emitter On Voltage IC= 5mA; VCE= 10V 0.6 V VBE(on)-2 Base-Emitter On Voltage IC= 2A; VCE= 1V 1.2 V ICBO Collector Cutoff Current VCB= 32V; IE= 0 VCB= 32V; IE= 0,TC=150℃ 0.1 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 μA hFE-1 DC Current Gain IC= 5mA; VCE= 10V 50 hFE-2 DC Current Gain IC= 0.5A; VCE= 1V 85 375 hFE-3 DC Current Gain IC= 2A; VCE= 1V 40 fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 5V; ftest= 100MHz 130 MHz isc Website:www.iscsemi.cn 2 |
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