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BD329 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BD329
Spiegazioni elettronici  isc Silicon NPN Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD329 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD329
DESCRIPTION
·DC Current Gain-
: hFE= 85~375(Min)@ IC= 0.5A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 20V(Min)
·Complement to type BD330
APPLICATIONS
·Especially for battery equipped applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
32
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
IBM
Base Current-Peak
1
A
PC
Collector Power Dissipation
@ TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
7
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
100
℃/W
isc Website：www.iscsemi.cn


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