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BD676 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD676 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Darligton Power Transistors BD676/BD678/BD680 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD676 -45 BD678 -60 V(BR)CEO Collector-emitter breakdown voltage BD680 IC=-50mA;IB=0 -80 V BD676 -45 BD678 -60 V(BR)CBO Collector-base breakdown voltage BD680 IC=-1mA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-30mA -2.5 V VBE(on) Base-emitter on voltage IC=-1.5A ; VCE=-3V -2.5 V ICBO Collector cut-off current VCB=rated BVCEO; IE=0 Ta=100 ℃ -0.2 -2.0 mA ICEO Collector cut-off current VCE=1/2rated BVCEO; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE DC current gain IC=-1.5A ; VCE=-3V 750 |
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