BD676 datasheet(1/3 Pages) ISC

Il numero della parte	BD676

Spiegazioni elettronici	Silicon PNP Darligton Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Darligton Power Transistors

BD676/BD678/BD680

DESCRIPTION

・

・With TO-126 package

・Complement to type BD675/BD677/BD679

・DARLINGTON

・High DC current gain

APPLICATIONS

・For use as output devices in

complementary general–purpose

amplifier applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD676

-45

BD678

-60

VCBO

Collector-base voltage

BD680

Open emitter

-80

V

BD676

-45

BD678

-60

VCEO

Collector-emitter voltage

BD680

Open base

-80

V

VEBO

Emitter -base voltage

Open collector

-5

V

IC

Collector current

-4

A

IB

Base current

-0.1

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

3.13

℃/W

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