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BU500 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU500 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU500 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A; IB=0;L=10mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=100mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.5A;IB=2A 1.0 V VBE Base-emitter on voltage IC=4.5A;VCE=5V 1.3 V ICBO Collector cut-off current VCE=1000V;VBE=-2V 0.02 mA ICEX Collector cut-off current VCE=1500V;VBE=-2V 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 10 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 36 hFE-2 DC current gain IC=4.5A ; VCE=5V 3.0 Switching times ts Storage time 1.2 μs tf Fall time IC=4.5A ;IB1=-IB2=1.5A VCC=100V ; 1.0 μs |
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