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BU500 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU500 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU500 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in large screen color deflection circuits. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICM Collector current-peak 16 A IB Base current 4 A PT Total power dissipation TC=25℃ 75 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.66 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Codice articolo simile - BU500 |
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Descrizione simile - BU500 |
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