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MJ12005 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ12005 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12005 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 B 750 V VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB=1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB=1A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 12 tf Fall Time IC=5A , IB1=1A; LB=8μH 0.4 1.0 μs isc Website:www.iscsemi.cn 2 |
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