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Motore di ricerca datesheet componenti elettronici |
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MJ12005 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ12005 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12005 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Safe Operation Area APPLICATIONS ·Designed for use in deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB B Base Current-Continuous 4 A IE Emitter Current-Continuous 12 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn |
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