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VT3060C Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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VT3060C Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() New Product VT3060C, VFT3060C, VBT3060C & VIT3060C Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89134 Revision: 08-Sep-09 2 Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 60 (minimum) - V Instantaneous forward voltage per diode (1) IF = 5 A IF = 7.5 A IF = 15 A TA = 25 °C VF 0.47 0.51 0.60 - - 0.70 V IF = 5 A IF = 7.5 A IF = 15 A TA = 125 °C 0.38 0.44 0.57 - - 0.65 Reverse current per diode (2) VR = 60 V TA = 25 °C TA = 125 °C IR - 20 1.2 45 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT3060C VFT3060C VBT3060C VIT3060C UNIT Typical thermal resistance per diode per device RθJC 2.5 1.7 6.0 4.8 2.5 1.7 2.5 1.7 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3060C-E3/4W 1.89 4W 50/tube Tube ITO-220AB VFT3060C-E3/4W 1.76 4W 50/tube Tube TO-263AB VBT3060C-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT3060C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT3060C-E3/4W 1.46 4W 50/tube Tube Figure 1. Maximum Forward Current Derating Curve Case Temperature (°C) 35 15 0 25 50 75 100 125 VFT3060C Mounted on Specific Heatsink 10 30 25 20 0 150 V(B,I)T3060C 5 Figure 2. Forward Power Dissipation Characteristics Per Diode 0 2 4 6 14 018 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 10 D = t p/T t p T 10 8 6 4 2 D = 1.0 8 12 16 14 12 |
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