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VT3060C Scheda tecnica(PDF) 3 Page - Vishay Siliconix

Il numero della parte VT3060C
Spiegazioni elettronici  Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF  5 Pages
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VT3060C Scheda tecnica(HTML) 3 Page - Vishay Siliconix

  VT3060C Datasheet HTML 1Page - Vishay Siliconix VT3060C Datasheet HTML 2Page - Vishay Siliconix VT3060C Datasheet HTML 3Page - Vishay Siliconix VT3060C Datasheet HTML 4Page - Vishay Siliconix VT3060C Datasheet HTML 5Page - Vishay Siliconix  
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New Product
VT3060C, VFT3060C, VBT3060C & VIT3060C
Vishay General Semiconductor
Document Number: 89134
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
Instantaneous Forward Voltage (V)
0.1
0.2
0.4
0.8
1.0
100
10
0.1
T
A = 25 °C
0.6
0.9
T
A = 150 °C
T
A = 125 °C
1
T
A = 100 °C
0.3
0.5
0.7
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
T
A = 150 °C
T
A = 25 °C
T
A = 100 °C
T
A = 125 °C
1
0.1
0.01
0.001
100
10
Figure 5. Typical Transient Thermal Impedance Per Diode
Figure 6. Typical Junction Capacitance Per Diode
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
V(B,I)T3060C
Junction to Case
VFT3060C
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
100
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p



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