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VT3060C Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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VT3060C Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() New Product VT3060C, VFT3060C, VBT3060C & VIT3060C Vishay General Semiconductor Document Number: 89134 Revision: 08-Sep-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Instantaneous Forward Voltage (V) 0.1 0.2 0.4 0.8 1.0 100 10 0.1 T A = 25 °C 0.6 0.9 T A = 150 °C T A = 125 °C 1 T A = 100 °C 0.3 0.5 0.7 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) T A = 150 °C T A = 25 °C T A = 100 °C T A = 125 °C 1 0.1 0.01 0.001 100 10 Figure 5. Typical Transient Thermal Impedance Per Diode Figure 6. Typical Junction Capacitance Per Diode 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) V(B,I)T3060C Junction to Case VFT3060C 1000 10 000 0.1 1 10 100 Reverse Voltage (V) 100 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p |
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