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EBJ41HE4BDFD Scheda tecnica(PDF) 11 Page - Elpida Memory |
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EBJ41HE4BDFD Scheda tecnica(HTML) 11 Page - Elpida Memory |
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11 / 19 page ![]() EBJ41HE4BDFD, EBJ41HE4BDFM, EBJ41HE4BDFP Data Sheet E1580E30 (Ver. 3.0) 11 Recommended DC Operating Conditions (TC = 0°C to +85°C) Parameter Symbol min. typ. max. Unit Notes Supply voltage VDD, VDDQ 1.425 1.5 1.575 V 1, 2, 3 VSS 0 0 0 V 1 VDDSPD 3.0 3.3 3.6 V Input reference voltage for address, command inputs VREFCA (DC) 0.49 × VDD — 0.51 × VDD V 1, 4, 5 Input reference voltage for DQ, DM inputs VREFDQ (DC) 0.49 × VDD — 0.51 × VDD V 1, 4, 5 Termination voltage VTT (DC) 0.49 × VDD — 0.51 × VDD V Notes: 1. DDR3 SDRAM component specification. 2. Under all conditions VDDQ must be less than or equal to VDD. 3. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. 4. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD (for reference: approx ±15 mV). 5. For reference: approx. VDD/2 ±15 mV. |
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