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CXG1108K Scheda tecnica(PDF) 1 Page - Sony Corporation |
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CXG1108K Scheda tecnica(HTML) 1 Page - Sony Corporation |
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1 / 6 page ![]() – 1 – E00Y33A25-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. CXG1108K 8 pin LCC (Ceramic) Power Amplifier Module for JCDMA Description The CXG1108K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. Features • Single power supply operation: VDD1 = VDD2 = 3.5V, VGG = 2.95V (@High mode), VGG = 2.7V (@Low mode) • Ultrasmall package: 0.065cc (6.2mm × 6.2mm × 1.7mm) • High efficiency: ηadd = 37.5% (@900MHz, POUT = 27dBm) • Output power (high/low mode switching supported): POUT ≤ 17dBm: Low mode (VGG = 2.7V) POUT = 17 to 27dBm: High mode (VGG 2.95V) • Gain: Gp = 26dB (@900MHz) Applications Power amplifier for JCDMA system cellular phones Structure p-Gate HFET module Recommended Operating Conditions VDD = 3.3 to 4.2V VGG = 2.95V±1% (High Mode) 2.7V±1% (Low Mode) Absolute Maximum Ratings • Operating case temperature Tcase –30 to +85 °C • Storage temperature Tstg –30 to +125 °C • Bias voltage VDD1, VDD2 6V • Bias voltage VGG 3.3 V (VDD1 = VDD2 = 3.5V) • Input power PIN 8 dBm GaAs module is ESD sensitive devices. Special handling precautions are required. |
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