STPS40M80C datasheet(3/10 Pages) STMICROELECTRONICS

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STPS40M80C

Characteristics

Doc ID 018718 Rev 1

3/10

To evaluate the conduction losses use the following equation:

P = 0.475 x IF(AV) + 0.008 x IF

(RMS)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-15

µA

Tj = 125 °C

(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

0.550

0.600

Tj = 125 °C

0.475

0.510

Tj = 25 °C

IF = 20 A

0.655

0.735

Tj = 125 °C

0.570

0.635

Tj = 25 °C

IF = 40 A

0.800

0.920

Tj = 125 °C

0.680

0.795

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

1012141618

22242628

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = t / T

(A)

F(AV)

(W)

F(AV)

100

125

150

175

(A)

F(AV)

Rth(j-a) = Rth(j-c)

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

P(tp)

(1µs)

ARM

t (µs)

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

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