STPS40M80C datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS40M80C

4/10

Doc ID 018718 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Relative thermal impedance

junction to case versus pulse

duration

100

120

140

160

180

200

220

240

260

1.E-03

1.E-02

1.E-01

1.E+00

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

I (A)

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

Z/R

th(j-c)

t (s)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

2030

5060

I (µA)

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

100

1000

10000

100

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

C(pF)

V (V)

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

(Typical values)

T = 125 °C

(Maximum values)

T = 125 °C

(Maximum values)

T = 25 °C

(A)

(V)

20.0

21.0

22.0

23.0

24.0

25.0

26.0

27.0

28.0

29.0

30.0

100

105

110

115

120

125

130

135

140

145

150

(A)

arm

) 150 °C, 1 µs

arm

(V)

arm

STPS40M80C Scheda tecnica(PDF) 4 Page - STMicroelectronics

STPS40M80C Scheda tecnica(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Scheda tecnica Scarica

Link URL