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ADP3170 Scheda tecnica(PDF) 8 Page - Analog Devices |
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ADP3170 Scheda tecnica(HTML) 8 Page - Analog Devices |
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8 / 16 page ![]() REV. 0 ADP3170 –8– CT Selection for Operating Frequency The ADP3170 uses a constant off-time architecture with tOFF determined by an external timing capacitor CT. Each time the high-side N-channel MOSFET switch turns on, the voltage across CT is reset to approximately 0 V. During the off-time, CT is charged by a constant current of 150 µA. Once CT reaches 3.0 V, a new on-time cycle is initiated. The value of the off-time is calculated using the continuous-mode operating frequency. Assuming a nominal operating frequency (fNOM) of 200 kHz at an output voltage of 1.8 V, the corresponding off-time is: t V Vf V VkHz s OFF OUT IN NOM = ×= ×= 1 1 1 18 5 1 200 32 – – . . µ (1) The timing capacitor cab be calculated from the equation: C tI V sA V pF T OFF CT TTH = × = × ≈ () . 3 2 150 3 150 µµ (2) The converter operates at the nominal operating frequency only at the above-specified VOUT and at light load. At higher values of VOUT, or under heavy load, the operating frequency decreases due to the parasitic voltage drops across the power devices. The actual minimum frequency at VOUT = 1.8 V is calculated to be 183 kHz (see Equation 3), where: RDS(ON)HSF is the resistance of the high-side MOSFET (estimated value: 6 m Ω) RDS(ON)LSF is the resistance of the low-side MOSFET (estimated value: 6 m Ω) RSENSE is the resistance of the sense resistor (estimated value: 2.5 m Ω) RL is the resistance of the inductor (estimated value: 3 m Ω) Table I. Output Voltage vs. VID Code VID3 VID2 VID1 VID0 VID25 VOUT(NOM) 0 1 0 0 0 1.050 V 0 1 0 0 1 1.075 V 0 0 1 1 0 1.100 V 0 0 1 1 1 1.125 V 0 0 1 0 0 1.150 V 0 0 1 0 1 1.175 V 0 0 0 1 0 1.200 V 0 0 0 1 1 1.225 V 0 0 0 0 0 1.250 V 0 0 0 0 1 1.275 V 1 1 1 1 0 1.300 V 1 1 1 1 1 1.325 V 1 1 1 0 0 1.350 V 1 1 1 0 1 1.375 V 1 1 0 1 0 1.400 V 1 1 0 1 1 1.425 V 1 1 0 0 0 1.450 V 1 1 0 0 1 1.475 V 1 0 1 1 0 1.500 V 1 0 1 1 1 1.525 V 1 0 1 0 0 1.550 V 1 0 1 0 1 1.575 V 1 0 0 1 0 1.600 V 1 0 0 1 1 1.625 V 1 0 0 0 0 1.650 V 1 0 0 0 1 1.675 V 0 1 1 1 0 1.700 V 0 1 1 1 1 1.725 V 0 1 1 0 0 1.750 V 0 1 1 0 1 1.775 V 0 1 0 1 0 1.800 V 0 1 0 1 1 1.825 V f t VI R R R V VI R R R R s VA m m V V A m mmm MIN OFF IN O MAX DS ON HSF SENSE L OUT IN O MAX DS ON HSF SENSE L DS ON LSF =× ×+ + () ×+ + () = × ×+ ×+ + 1 1 33 523 6 3 1 8 523 6 2 5 3 6 –– –– . –( ) – . –( . – () ( ) ( ) () () µ ΩΩ Ω ΩΩΩ)) = 183 kHz (3) Inductance Selection The choice of inductance determines the ripple current in the inductor. Less inductance leads to more ripple current, which increases the output ripple voltage and the conduction losses in the MOSFETs, but allows using smaller-size inductors and, for a specified peak-to-peak transient deviation, output capacitors with less total capacitance. Conversely, a higher inductance means lower ripple current and reduced conduction losses, but requires larger-size inductors and more output capacitance for the same peak-to-peak transient deviation. The following equa- tion shows the relationship between the inductance, oscillator frequency, peak-to-peak ripple current in an inductor and input and output voltages: For 6 A peak-to-peak ripple current, which corresponds to approximately 25% of the 23 A full-load dc current in an inductor, Equation 4 yields an inductance of: L Vs A nH = × = 18 33 6 990 .. µ A 1 µH inductor can be used, which gives a calculated ripple current of 5.9 A at no load. The inductor should not saturate at the peak current of 26 A and should be able to handle the sum of the power dissipation caused by the average current of 23 A in the winding and the core loss. L Vt I OUT OFF L RIPPLE = × () (4) |
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