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CSD18502KCS Scheda tecnica(PDF) 5 Page - Texas Instruments

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Il numero della parte CSD18502KCS
Spiegazioni elettronici  40-V, N-Channel NexFET Power MOSFETs
PDF  9 Pages
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Produttore elettronici  TI [Texas Instruments]
Homepage  http://www.ti.com
Logo TI - Texas Instruments

CSD18502KCS Scheda tecnica(HTML) 5 Page - Texas Instruments

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0
20
40
60
80
100
120
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
G001
0.01
0.1
1
10
100
1000
5000
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
Single Pulse
Typical RthetaJA =52ºC/W
G001
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
CSD18502KCS
www.ti.com
SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 11. Maximum Safe Operating Area
Figure 12. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 13. Maximum Drain Current vs. Temperature
Copyright © 2012, Texas Instruments Incorporated
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