CSD18502KCS datasheet(1/9 Pages) TI

Il numero della parte	CSD18502KCS

Spiegazioni elettronici	40-V, N-Channel NexFET Power MOSFETs

PDF	9 Pages

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Produttore elettronici	TI [Texas Instruments]

Homepage	http://www.ti.com

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1 / 9 page

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VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 100A

TC = 125ºC Id = 100A

G001

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Qg - Gate Charge (nC)

ID = 100A

VDS = 20V

G001

CSD18502KCS

www.ti.com

SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012

40-V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD18502KCS

1

FEATURES

PRODUCT SUMMARY

2

•

Ultra Low Qg and Qgd

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

VDS

Drain to Source Voltage

40

V

•

Avalanche Rated

Qg

Gate Charge Total (10V)

52

nC

Qgd

Gate Charge Gate to Drain

8.4

nC

•

Logic Level

VGS = 4.5V

3.3

m

Ω

•

Pb Free Terminal Plating

RDS(on)

Drain to Source On Resistance

VGS = 10V

2.4

m

Ω

•

RoHS Compliant

VGS(th)

Threshold Voltage

1.8

V

•

Halogen Free

•

TO-220 Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

TO-220 Plastic

CSD18502KCS

Tube

50

Tube

Package

•

DC-DC Conversion

•

Secondary Side Synchronous Rectifier

ABSOLUTE MAXIMUM RATINGS

•

Motor Control

TA = 25°C

VALUE

UNIT

VDS

Drain to Source Voltage

40

V

DESCRIPTION

VGS

Gate to Source Voltage

±20

V

The NexFET™ power MOSFET has been designed

Continuous Drain Current (Package limited),

100

to minimize losses in power conversion applications.

TC = 25°C

Continuous Drain Current (Silicon limited),

ID

200

A

TC = 25°C

Figure 1. Top View

Continuous Drain Current (Silicon limited),

126

TC = 100°C

IDM

Pulsed Drain Current (1)

211

A

PD

Power Dissipation

216

W

TJ,

Operating Junction and Storage

–55 to 150

°C

TSTG

Temperature Range

Avalanche Energy, single pulse

EAS

330

mJ

ID = 81A, L = 0.1mH, RG = 25Ω

(1) Pulse duration

≤300μs, duty cycle ≤2%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

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