JS28F128P33BF70 datasheet(1/88 Pages) MICRON

Il numero della parte	JS28F128P33BF70

Spiegazioni elettronici	Numonyx짰 P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)

PDF	88 Pages

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Produttore elettronici	MICRON [Micron Technology]

Homepage	http://www.micron.com

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Datasheet

Jul 2011

1

Order Number: 208034-04

Numonyx® P33-65nm Flash Memory

128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Datasheet

Product Features

High performance:

— 60ns initial access time for Easy BGA

— 70ns initial access time for TSOP

— 25ns 8-word asynchronous-page read

mode

— 52MHz with zero wait states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16-, and continuous-word options

for burst mode

— 3.0V buffered programming at 1.8MByte/s

(Typ) using 256-word buffer

— Buffered Enhanced Factory Programming at

3.2MByte/s (typ) using 256-word buffer

Architecture:

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 128-KByte main blocks

— Blank Check to verify an erased block

Voltage and Power:

—VCC (core) voltage: 2.3V – 3.6V

—VCCQ (I/O) voltage: 2.3V – 3.6V

— Standby current: 35μA(Typ) for 64-Mbit,

50μA(Typ) for 128-Mbit

— Continuous synchronous read current:

23mA (Typ) at 52 MHz

Security:

— One-Time Programmable Registers:

— 64 OTP bits, programmed with unique

information by Numonyx

— 2112 OTP bits, available for customer

programming

— Absolute write protection: VPP = VSS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

Software:

— 20µs (Typ) program suspend

— 20µs (Typ) erase suspend

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Common Flash Interface capable

Density and Packaging:

— 56-Lead TSOP package (128-Mbit, 64-Mbit)

— 64-Ball Easy BGA package (128-Mbit, 64-

Mbit)

— 16-bit wide data bus

Quality and Reliability:

—JESD47E Compliant

— Operating temperature: –40°C to +85°C

— Minimum 100,000 erase cycles per block

— 65nm process technology

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