STPS40M120CT datasheet(3/9 Pages) STMICROELECTRONICS

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STPS40M120C

Characteristics

Doc ID 022916 Rev 1

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To evaluate the conduction losses use the following equation:

P = 0.54 x IF(AV) + 0.0065 x IF

(RMS)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

370

µA

Tj = 125 °C

(2)

Forward voltage drop

Tj = 125 °C

IF = 5 A

0.44

0.49

Tj = 125 °C

IF = 10 A

0.52

0.57

Tj = 25 °C

IF = 20 A

-0.79

Tj = 125 °C

0.61

0.67

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

Figure 2.

Average forward power dissipation

versus average forward current (per

diode)

Figure 3.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

121620

2428

(W)

F(AV)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ = t / T

(A)

F(AV)

100

125

150

(A)

F(AV)

Rth(j-a) = Rth(j-c)

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Relative variation of thermal

impedance junction to case versus

pulse duration

P(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

Single pulse

t (s)

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