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STPS40M120CT Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STPS40M120CT Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STPS40M120C 4/9 Doc ID 022916 Rev 1 Figure 6. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 7. Junction capacitance versus reverse voltage applied (typical values, per diode) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 1020 30405060 70 8090 100 110 120 Tj=150°C Tj=125°C Tj=25°C Tj=100°C Tj=75°C Tj=50°C I (mA) R V (V) R 100 1000 10000 1 10 100 1000 F=1MHz Vosc =30mVRMS Tj=25°C C(pF) V (V) R Figure 8. Forward voltage drop versus forward current (per diode) Figure 9. Reverse safe operating area (tp < 10 µs and Tj < 125 °C) 0.1 1.0 10.0 100.0 1000.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj=25°C (Maximum values) Tj=125°C (Maximum values) Tj=125°C (Typical values) I (A) FM V (V) FM 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 120 130 140 150 160 170 I (A) arm V (V) arm |
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