STN4NF20L datasheet(3/12 Pages) STMICROELECTRONICS

Il numero della parte	STN4NF20L

Spiegazioni elettronici	N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™II Power MOSFET

PDF	12 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STN4NF20L

Electrical ratings

Doc ID 17445 Rev 2

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 20

Drain current continuous TC = 25 °C

Drain current continuous TC = 100 °C

0.63

IDM

(1)

Pulse width limited by safe operating area.

Drain current pulsed

PTOT

(2)

This value is rated according to Rthj-amb

≤ 10 sec.

Total dissipation at TC = 25 °C

3.3

dv/dt (3)

Isd

≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-amb

(1)

When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec).

Thermal resistance junction to ambient

°C/W

Rthj-amb

(2)

When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec).

62.5

°C/W

Table 4.

Thermal data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive(1)

Pulse width limited by TJMAX.

EAS

Single pulse avalanche energy (2)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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