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STN4NF20L Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STN4NF20L
Spiegazioni elettronici  N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™II Power MOSFET
PDF  12 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN4NF20L Scheda tecnica(HTML) 5 Page - STMicroelectronics

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STN4NF20L
Electrical characteristics
Doc ID 17445 Rev 2
5/12
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
-
1
4
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 1 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 14)
-
51
90
3.5
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 14)
-
56
105
3.7
ns
nC
A



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