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MIC5166 Scheda tecnica(PDF) 2 Page - Micrel Semiconductor |
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MIC5166 Scheda tecnica(HTML) 2 Page - Micrel Semiconductor |
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2 / 25 page ![]() Micrel, Inc. MIC5166 June 2012 2 M9999-060612-A Ordering Information Part Number Output Voltage Junction Temperature Range (1) Package Lead Finish MIC5166YML ½VDDQ –40 °C to +125°C 10-Pin 3mm × 3mm MLF® Pb-Free Note: 1. MLF ® is a GREEN RoHS-compliant package. Lead finish is NiPdAu. Mold compound is Halogen Free.. Pin Configuration 10-Pin 3mm × 3mm MLF® (ML) Pin Description Pin Number Pin Name Description 1 VREF Reference Voltage. This output provides an output of the internal reference voltage VDDQ/2. The VREF output is used to provide the reference voltage for the memory chip. Connect a 1.0µF capacitor to ground at this pin. This pin can sink and source 10mA. 2 BIAS BIAS Supply Voltage. The BIAS supply is the power MOSFET gate drive supply voltage and the supply bus for the IC. The BIAS voltage must be greater than (VTT + 2.2V). A 1.0µF ceramic capacitor from the BIAS pin to PGND must be placed next to the IC. 3 AGND Analog Ground. Internal signal ground for all low-power circuits. 4 VDDQ Input Supply. VDDQ is connected to an internal precision divider which provides the VREF. Connect a 4.7µF capacitor to ground at this pin. 5 PG Power Good. This is an open drain output that indicates when the output voltage is within ±10% of the reference voltage. The PG flag is asserted typically with 65µs delay when the enable is set low or when the output goes outside ±10% the window threshold. 6 SNS Feedback. Input to the error amplifier. 7 EN Enable. Logic level control of the output. Logic HIGH enables the MIC5166 and a logic LOW shuts down the MIC5166. In the off state, supply current of the device is greatly reduced (typically 0.2µA). The EN pin should not be left open. 8 PGND Power Ground. Internal ground connection to the source of the internal, low-side drive, N-channel MOSFET. 9 VTT Power Output. This is the connection to the source of the internal high-side N-channel MOSFET and drain of the low-side N-channel MOSFET. This is a high-frequency, high-power connection, therefore two 10µF output capacitors must be placed as close to the IC as possible. 10 VIN High-Side N-Channel MOSFET Drain Connection. The VIN operating voltage range is from 0.9V to 3.6V. An input capacitor between the VIN pin and the PGND is required as close to the chip as possible. EP ePad Exposed Pad. Must be connected to a GND plane for best thermal performance. |
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