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STPS2200 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STPS2200
Spiegazioni elettronici  Power Schottky diode
PDF  9 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS2200 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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DocID024381 Rev 1
3/9
STPS2200
Characteristics
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Forward voltage drop versus forward
current
PF(AV)(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
T
δ=tp/T
tp
δ = 0.05
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
IF(AV)(A)
IF(A)
1.E-02
1.E-01
1.E+00
1.E+01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T
j=125°C
(Typical values)
T
j=25°C
(Maximum values)
T
j=25°C
(Typical values)
Tj = 125°C
(Maximum values)
VF(V)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Junction capacitance versus reverse
voltage applied (typical values)
IR(mA)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
20
40
60
80
100
120
140
160
180
200
Tj = 150 °C
Tj = 50 °C
Tj = 100 °C
Tj = 125 °C
Tj = 25 °C
Tj = 75 °C
VR(V)
C(pF)
10
100
1000
1
10
100
1000
VR(V)
F = 1 MHz
VOSC = 30 mV
RMS
Tj = 25 °C
Figure 5. Relative variation of thermal
impedance junction to lead versus pulse
duration (SMB)
Figure 6. Relative variation of thermal
impedance junction to lead versus pulse
duration (SMBflat)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
SMB
Zth(j-l)/Rth(j-l)
tp(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
SMBflat
tp(s)
Zth(j-l)/Rth(j-l)



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