STU80N4F6 datasheet(4/18 Pages) STMICROELECTRONICS

Il numero della parte	STU80N4F6

Spiegazioni elettronici	N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

PDF	18 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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4 / 18 page

Electrical characteristics

STD80N4F6, STU80N4F6

4/18

DocID023839 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 40 V

VDS = 40 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 40 A

for DPAK

for IPAK

5.5

5.8

6.3

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

2150

Coss

Output capacitance

335

Crss

Reverse transfer

capacitance

160

Total gate charge

VDD = 20 V, ID = 80 A,

VGS = 10 V

(see Figure 14)

-36

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

10.5

Rise time

7.6

td(off)

Turn-off delay time

46.1

Fall time

11.9

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