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STU80N4F6 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STU80N4F6
Spiegazioni elettronici  N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK
PDF  18 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU80N4F6 Scheda tecnica(HTML) 5 Page - STMicroelectronics

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DocID023839 Rev 3
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STD80N4F6, STU80N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
80
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
320
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 40 A, VGS = 0
-
1.3
V
trr
Reverse recovery time
ISD = 80 A, di/dt = 100 A/µs
VDD = 32 V (see Figure 17)
-41.1
ns
Qrr
Reverse recovery charge
-
43.6
nC
IRRM
Reverse recovery current
-
2.1
A



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