STM32F407IG datasheet(88/167 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F405xx, STM32F407xx

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Doc ID 022152 Rev 2

5.3.9

Internal clock source characteristics

The parameters given in Table 30 and Table 31 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 11.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Table 30.

HSI oscillator characteristics (1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the

ST website www.st.com.

Factory-

calibrated

TA = –40 to 105 °C

–8

4.5

TA = –10 to 85 °C

–4

TA = 25 °C

–1

tsu(HSI)

(3)

Guaranteed by design, not tested in production.

HSI oscillator

startup time

-2.2

µs

IDD(HSI)

HSI oscillator

power consumption

-60

µA

Table 31.

LSI oscillator characteristics (1)

VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

(2)

Based on characterization, not tested in production.

Frequency

kHz

tsu(LSI)

(3)

Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)

(3)

LSI oscillator power consumption

0.4

0.6

µA

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