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CSD19503KCS Scheda tecnica(PDF) 4 Page - Texas Instruments

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Il numero della parte CSD19503KCS
Spiegazioni elettronici  80 V N-Channel NexFET Power MOSFETs
PDF  10 Pages
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD19503KCS Scheda tecnica(HTML) 4 Page - Texas Instruments

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0.4
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−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID =60A
G001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
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TC - Case Temperature (ºC)
ID = 250uA
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 60A
TC = 125°C,I D = 60A
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Qg - Gate Charge (nC)
ID = 60A
VDS = 40V
G001
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19503KCS
SLPS479 – DECEMBER 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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