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UDT1605G-AB3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UDT1605G-AB3-R
Spiegazioni elettronici  120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UDT1605G-AB3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UDT1605
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R208-048.A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at TA=25°C (Note 1)
Linear Derating Factor
PD
1
W
8
mW/°C
Power Dissipation at TA=25°C (Note 2)
Linear Derating Factor
PD
2.8
W
22
mW/°C
Junction Temperature
TJ:
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
RθJA
125
°C/W
Junction to Ambient (Note 2)
RθJA
45
°C/W
Notes: 1. For a device surface mounted on 25mmx25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
2. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100μA
140
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA (Note 1)
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA
10
V
Collector Cut-Off Current
ICBO
VCB=10V
100
nA
VCB=120V, TAMB=100°C
10
μA
Emitter Cut-Off Current
IEBO
VEB=8V
0.1
μA
Collector Emitter Cut-Off Current
ICES
VCES=120V
10
μA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=250mA, IB=0.25mA (Note 1)
1
V
IC=1A, IB=1mA (Note 1)
1.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=1mA (Note 1)
1.8
V
Base-Emitter Turn-On Voltage
VBE(ON)
IC=1A,VCE=5V (Note 1)
1.7
V
DC Current Gain
hFE
IC=50mA,VCE=5V (Note 1)
2K
IC=500mA, VCE=5V (Note 1)
5K
IC=1A, VCE=5V (Note 1)
2K
100K
IC=2A, VCE=5V (Note 1)
0.5
Transition Frequency
fT
IC=100mA, VCE=10V, f=20MHz
150
MHz
Input Capacitance
CIBO
VCB=500mV, f=1MHz
90
pF
Output Capacitance
COBO
VCB=10V, f=1MHz
15
pF
Turn-On Time
t(ON)
IC=500mA, VCE=10V
IB1=IB2=0.5mA
0.5
μs
Turn-Off Time
t(OFF)
IC=500mA, VCE=10V
IB1=IB2=0.5mA
1.6
μs
Note: 1. Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%



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