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UDT1605G-AB3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UDT1605G-AB3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R208-048.A 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC current gain and low collector-emitter saturation voltage, making it suitable for efficient driving functions. The UTC UDT1605 is suitable for a variety of efficient driving functions, etc. FEATURES * High breakdown voltage * Low saturation voltage * Ultra-high DC current gain SYMBOL RDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UDT1605L-AB3-R UDT1605G-AB3-R SOT-89 B C E Tape Reel UDT1605L-AB3-R (1)Packing Type (2)Package Type (3)Halogen Free (1) R: Tape Reel (2) AB3: SOT-89 (3) G: Halogen Free, L: Lead Free |
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