UTT6N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R502-779.C



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

0.4

0

Drain Current vs. Gate Threshold Voltage

1.2

1.6

2.4

0.8

2.0

0

50

100

150

200

250

300

0

25

75

100

125

50

0

50

100

150

200

250

300

Drain-Source On-State Resistance

Characteristics

0

1.2

3.0

0

0.05

0.1

0.15

0.2

0.6

1.8

2.4

3.6

0.3

0

Drain Current vs. Source to Drain Voltage

0.2

0.4

0.6

0.8

1.0

0

0.6

1.2

1.8

2.4

3.0

0.25

3.6

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

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presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.