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UTT6N10L-AA3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UTT6N10L-AA3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-779.C 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. FEATURES * RDS(on) =80m Ω @VGS = 10 V,ID=6A * High Switching Speed * Low Crss (Typically 3.1pF) * Low Gate Charge(Typically 4.3nC) SYMBOL G (1) D (2) S (3) SOT-223 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UTT6N10L-AA3-R UTT6N10G-AA3-R SOT-223 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source UTT6N10L-AA3-R (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free, G: Halogen Free |
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