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STTH2R02-Y Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STTH2R02-Y Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  October 2010 Doc ID 17934 Rev 1 1/8 8 STTH2R02-Y Automotive ultrafast recovery diode Features ■ very low conduction losses ■ negligible switching losses ■ low forward and reverse recovery times ■ high junction temperature ■ AEC-Q101 qualified Description The STTH2R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. Table 1. Device summary Symbol Value IF(AV) 2 A VRRM 200 V Tj (max) 175 °C VF (typ) 0.7 V trr (typ) 15 ns K A SMB STTH2R02UY K A www.st.com |
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