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STTH2R02-Y Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STTH2R02-Y Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH2R02-Y 4/8 Doc ID 17934 Rev 1 Figure 5. Junction capacitance versus reverse applied voltage (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) 1 10 100 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) 0 10 20 30 40 50 60 10 100 1000 Q RR(nC) I F=2A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 7. Reverse recovery time versus dIF/dt (typical values) Figure 8. Peak reverse recovery current versus dIF/dt (typical values) 0 10 20 30 40 50 60 10 100 1000 t RR(ns) I F=2A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) 0 1 2 3 4 5 6 10 100 1000 I RM(A) I F=2A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 9. Dynamic parameters versus junction temperature Figure 10. Thermal resistance, junction to ambient, versus copper surface under each lead 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Q RR;IRM [Tj]/ QRR;IRM [Tj=125°C] I RM Q RR I F=2A V R=160V Tj(°C) 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R th(j-a)(°C/W) SCU(cm²) Epoxy printed circuit board, copper thickness = 35 µm |
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