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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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2SB766 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SB766 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual 2SB766 PNP Silicon Medium Power Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente Symbol A b b1 c D D1 E E1 e e1 L Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.100 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.114 0.035 Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.122 0.043 Dimensions In Millimeters Dimensions In Inches 0.060TYP 1.500TYP D D1 C A b b1 e e1 SOT-89 1.BASE 2.COLLECTOR 3.EMITTER FEATURES Power dissipation P CM : 500mW Tamb=25 Collector current ICM :-1 A Collector-base voltage VB(BR)CBO : -30 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -10 A, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO Ic= -2mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-10 A, IC=0 -5 V Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A hFE(1) VCE=-10V, IC=-500mA 85 340 DC current gain hFE(2) VCE=-5V, IC=-1A 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V Transition frequency fT VCE=-10V, IC=-50mA, f=200MHz 200 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 30 pF CLASSIFICATION OF hFE(1) Rank Q R S Range 85-170 120-240 170-340 Marking AQ AR AS 01-Jun-2002 Rev. A Page 1 of 2 |
Codice articolo simile - 2SB766_15 |
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Descrizione simile - 2SB766_15 |
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