2SB766_15 datasheet(2/2 Pages) SECOS

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Any changing of specification will not be informed individual

2SB766

PNP Silicon

Medium Power Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

VBE(sat) ⎯ IC

hFE ⎯ IC

fT ⎯ IE

PC ⎯ Ta

IC ⎯ VCE

VCE(sat) ⎯ IC

Cob ⎯ VCB

Safe operation area

160

120

140

100

1.4

1.2

0.4

1.0

0.8

0.2

0.6

Copper plate at the collector

is more than 1 cm2 in area,

1.7 mm in thickness

Ambient temperature T

a (°C)

−10

−8

−2

−6

−4

−1.50

−1.25

−1.00

− 0.75

− 0.50

− 0.25

= 25°C

=−10 mA

−1 mA

−2 mA

−3 mA

−4 mA

−5 mA

−6 mA

−7 mA

−8 mA

−9 mA

Collector-emitter voltage V

CE (V)

− 0.01

− 0.1

−1

−10

− 0.01

− 0.1

−1

−10

−100

IC / IB

= 10

−25°C

= 75°C

°C

Collector current I

C (A)

− 0.01

− 0.1

−1

−10

− 0.01

− 0.1

−1

−10

−100

IC / IB

= 10

=−25°C

°C

Collector current I

C (A)

− 0.01

− 0.1

−1

−10

600

500

400

300

200

100

VCE

=−10 V

= 75°C

°C

−25°C

Collector current I

C (A)

100

200

160

120

VCB

=−10 V

= 25°C

Emitter current I

E (mA)

−1

−10

−100

= 0

= 1 MHz

= 25°C

Collector-base voltage V

CB (V)

− 0.01

− 0.1

−1

−10

− 0.001

− 0.01

− 0.1

−1

−10

Single pulse

= 25°C

= 10 ms

= 1 s

ICP

Collector-emitter voltage V

CE (V)

01-Jun-2002 Rev. A

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