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AN3432 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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AN3432 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 24 page ![]() AN3432 Photocurrent production basics of silicon solar cells Doc ID 019041 Rev 1 3/24 1 Photocurrent production basics of silicon solar cells 1.1 The photovoltaic effect To generate a current through a semi conductor, some energy is required to extract the electron from the valence band to the conduction band. This energy is greater than material band gap energy (Egap). Thus in case of silicon solar cell, if the photon energy (sunlight carrier) E = h ν is higher than the silicon band gap energy Egap =1.12eV, the electrons migrate through a PN junction. Figure 1. Current generation through a semiconductor 1.2 The solar cell model Silicon solar cell creates a photocurrent called IL that is proportional to illumination and independent of output cell voltage. However, when this voltage increases, a part of this current is dissipated in p-n junction. This is why the equivalent model, shown in Figure 2, consists in a current generator (photocurrent), a diode (intrinsic p-n junction), two resistances Rp (parallel resistance: models the noise current between top and bottom of the solar cell) and Rs (series resistance: simulates the materials and contact losses). Conduction band é Valence band E = h > E ν gap E(eV) E V E c E= E -E gap c v Forbidden area |
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