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AN3432 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte AN3432
Spiegazioni elettronici  How to choose a bypass diode for a silicon panel junction box
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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AN3432 Scheda tecnica(HTML) 5 Page - STMicroelectronics

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AN3432
Photocurrent production basics of silicon solar cells
Doc ID 019041 Rev 1
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Equation 3
The open circuit voltage (Voc) is the voltage corresponding to the output current of solar cell
or panel set to 0. The photocurrent is equal to the current lost in the intrinsic element of the
cell, and Voc is equal to the intrinsic diode forward voltage (Vd).
Equation 4
Equation 5
In the following, for easier the reading, Voc is the open circuit voltage of the panel and Voc_u
the open circuit voltage of the solar cell. The relation between them is given in Equation 6.
Equation 6
where nb is the number of cells contained in one panel.
1.3.2
Voc and Isc variations with ambient temperature
The open circuit voltage is mainly linked with the parasitic diode forward voltage then it is
temperature dependent with a negative temperature coefficient (
αVoc). Then the maximum
value for Voc is the value at minimum junction temperature specified in the panel data sheet.
Strongly linked with the photocurrent, the short circuit current increases slightly with the
temperature (
αIsc>0).
Figure 3.
Temperature effect on Isc and Voc parameters
Isc ~ IL
IL = Io · (exp
Voc
Rp
q
KT
·Voc)
- 1) -
(
Voc =Vd
Voc =
Σ
nb
i = 1
Voc_u_i
I(V)
V
V (T2)
OC
V (T1)
OC
αV ~ -0.4% / C
oc
°
I (T2)
SC
I (T1)
SC
αI ~ + 0.05% / °C
sc
T>
2
T
1



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