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SDF08N50 Scheda tecnica(PDF) 2 Page - SamHop Microelectronics Corp.

Il numero della parte SDF08N50
Spiegazioni elettronici  Super high dense cell design for low RDS(ON).
PDF  11 Pages
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF08N50 Scheda tecnica(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Dec,24,2013
2
Ver 2.4
4 Symbol
Min
Typ
Max
Units
BVDSS
500
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
6.2
S
VSD
CISS
835
pF
COSS
94
pF
CRSS
9
pF
Qg
30
nC
17
nC
Qgs
33
nC
Qgd
14
tD(ON)
ns
tr
2.5
ns
tD(OFF)
4
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=250V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=250V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=4A
VDS=20V , ID=4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=400V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
0.9
c
f=1.0MHz
c
VDS=250V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=3A
1.4
V
11
0.7
0.79
3
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
SDP08N50
SDF08N50



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