SDF08N50 datasheet(3/11 Pages) SAMHOP

Il numero della parte	SDF08N50

Spiegazioni elettronici	Super high dense cell design for low RDS(ON).

PDF	11 Pages

Scroll/Zoom	100%

Produttore elettronici	SAMHOP [SamHop Microelectronics Corp.]

Homepage	http://www.samhop.com.tw

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Tj( C )

Ver 2.4

www.samhop.com.tw

Dec,24,2013

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.10

1.05

1.00

0.95

0.90

0.85

1.15

125 150

100

-25

-50

ID=250uA

8.0

6.4

4.8

1.6

Tj=125 C

-55 C

25 C

2.4

2.0

1.6

1.2

0.8

0.4

V GS =10V

3.0

2.6

2.2

1.8

1.4

1.0

100

125

150

V GS =10V

ID=4A

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

VGS =5V

VGS =10V

VGS =6V

ID, Drain Current(A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature(° C )

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

0.0

1.2

7.2

6.0

4.8

3.6

2.4

VGS =7V

SDP08N50

SDF08N50

3.2

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