STM121N datasheet(1/7 Pages) SAMHOP

Il numero della parte	STM121N

Spiegazioni elettronici	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Produttore elettronici	SAMHOP [SamHop Microelectronics Corp.]

Homepage	http://www.samhop.com.tw

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1 / 7 page

S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

100

V

±20

Gate-Source Voltage

Drain-Source Voltage

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 1.1

www.samhop.com.tw

Jul,25,2012

1

Details are subject to change without notice.

TA=25°C

W

PD

°C

-55 to 150

TA=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

62.5

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

TA=70°C

A

EAS

mJ

Single Pulse Avalanche Energy

d

TA=70°C

W

a

12

2.8

10

2

STM121N

Gr

P

Pr

P

2.2

1.28

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m ) Max

100V

2.8A

192

@

VGS=4.5V

155

@

VGS=10V

Dual N-Channel Enhancement Mode Field Effect Transistor

SO-8

1

4

3

2

1

D2

D1

G 2

S 2

G 1

S 1

5

6

7

8

Suface Mount Package.

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