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STM121N Scheda tecnica(PDF) 2 Page - SamHop Microelectronics Corp.

Il numero della parte STM121N
Spiegazioni elettronici  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM121N Scheda tecnica(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
V
124
m ohm
VGS=10V , ID=1.4A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=80V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
ON CHARACTERISTICS
155
STM121N
Ver 1.1
www.samhop.com.tw
Jul,25,2012
2
1
1.9
3
gFS
S
CISS
725
pF
COSS
50
pF
CRSS
32
pF
Qg
11
nC
10.7
21.5
11
tD(ON)
10
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=10V , ID=1.4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Reverse Transfer Capacitance
c
f=1.0MHz
c
VSD
nC
Qgs
nC
Qgd
1.4
2.6
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=50V,ID=1.4A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.78
1.3
V
Notes
VDS=50V,ID=1.4A,VGS=10V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
_
_
_
5
VGS=4.5V , ID=1.25A
mohm
142
192
1015
70
60
22
20
43
22
14
2
3.6



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